Structural and electronic properties of boron-induced defects on the Si(001) surface
- Resource Type
- Authors
- Chang-Youn Moon; Daejin Eom; Ja-Yong Koo
- Source
- Physical Review B. 100
- Subject
- Materials science
Silicon
Dimer
Doping
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Molecular physics
law.invention
chemistry.chemical_compound
chemistry
law
Vacancy defect
0103 physical sciences
Atom
Physics::Atomic and Molecular Clusters
Density functional theory
Scanning tunneling microscope
010306 general physics
0210 nano-technology
Boron
- Language
- ISSN
- 2469-9969
2469-9950
The (001) surface of heavily boron (B) doped silicon is investigated by employing the scanning tunneling microscopy measurements and the density functional theory calculations. Two different defect structures are found in the surface layers, both of which evolve the characteristic spectral features near the valence band maximum. One of the two incorporates a B atom in the second layer with the Si dimers intact and is scattered randomly in the layer. The other one incorporates a B atom in the fourth layer with a dimer vacancy produced directly above it and tends to get together with nearby dimer vacancies to grow the extended or line defects along the perpendicular direction to the dimer rows. Such defect formation is energetically favored to enhance the B populations in the second and fourth layers by $\ensuremath{\sim}120$ and $\ensuremath{\sim}80$ times, respectively, when compared to that in the bulk layer.