Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode
- Resource Type
- Authors
- Andrew J. Pope; Chad A. Stephenson; Albert Colon; Albert G. Baca; Michael S. Van Heukelom; Brianna Klein; Erica A. Douglas; Anna Tauke-Pedretti
- Source
- Solid-State Electronics. 151:47-51
- Subject
- 010302 applied physics
Materials science
business.industry
Schottky diode
Algan gan
02 engineering and technology
High-electron-mobility transistor
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
On resistance
Electronic, Optical and Magnetic Materials
0103 physical sciences
Materials Chemistry
Breakdown voltage
Optoelectronics
Figure of merit
Electrical and Electronic Engineering
0210 nano-technology
business
Diode
Voltage
- Language
- ISSN
- 0038-1101
Al0.26Ga0.74N/GaN on SiC lateral Schottky diodes were fabricated with variable anode-to-cathode spacing and were analyzed for blocking and on-state device performance. On-chip normally-on High Electron Mobility Transistor (HEMT) structures were also fabricated for a comparison of blocking characteristics. The Schottky diode displayed an ideality factor of 1.59 with a Ni/AlGaN zero bias barrier height of 1.18 eV and a flat band barrier height of 1.59 eV. For anode-to-cathode spacings between 10 and 100 μm, an increase in median breakdown voltages from 529 V to 8519 V and median specific on-resistance (Ron-sp) from 1.5 to 60.7 mΩ cm2 was observed with an increase in spacing. The highest performing diode had a lateral figure of merit of 1.37 GW/cm2 corresponding to a breakdown voltage upwards of 9 kV and a Ron-sp of 59 mΩ cm2. This corresponds to the highest Schottky diode breakdown voltage reported thus far with an Al0.26Ga0.74N/GaN lateral structure.