Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs
- Resource Type
- Authors
- A Osinsky; Matthew J. Schurman; Ian T. Ferguson; Robert F. Karlicek; J. E. Nering; Y Li; M. G. Brown; V Merai; C. A. Tran; I Eliashevich; R. A. Stall
- Source
- Journal of Crystal Growth. 195:397-400
- Subject
- Materials science
Photoluminescence
business.industry
chemistry.chemical_element
Chemical vapor deposition
Electroluminescence
Condensed Matter Physics
law.invention
Inorganic Chemistry
Wavelength
chemistry
law
Materials Chemistry
Optoelectronics
Metalorganic vapour phase epitaxy
business
Indium
Diode
Light-emitting diode
- Language
- ISSN
- 0022-0248
InGaN/GaN multiple quantum wells (MQW) and high-brightness MQW light-emitting diodes were grown by production scale metal-organic chemical vapor deposition (MOCVD). We have found that the extent of InGaN phase separation in InGaN MQWs depends strongly on growth conditions. Multiple peaks in photoluminescence (PL) of InGaN/GaN MQWs and electroluminescence (EL) of MQW LEDs can be observed at room temperature. In the presence of InGaN phase separation, photoluminescence of MQW is red-shifted with respect to the expected wavelength calculated for the apparent indium composition determined by X-ray diffraction (XRD). We have determined that InGaN phase separation is necessary for high brightness electroluminescence in LEDs. Under optimal growth conditions, MQWs with very well-defined XRD satellite peaks and PL in the wavelength range of (450–520 nm) can be achieved. High-brightness LEDs emitting at 480 nm have been successfully fabricated with an output power well better than 2 mW at 20 mA and with a forward voltage less than 4 V.