Synthesis of High Sn Content Ge1–x–y Six Sny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications.
- Resource Type
- Article
- Source
- ACS Applied Materials & Interfaces; 10/18/2023, Vol. 15 Issue 41, p48382-48394, 13p
- Subject
- Language
- ISSN
- 19448244