High performance thin film transistors (TFTs) are fabricated on quarts substrate based on zone-melting-recrystallization (ZMR) of amorphous silicon (a-Si) strips induced by micro-thermal-plasma- jet (u-TPJ) irradiation. The grain boundaries (GBs) in strip pattern were almost excluded and most of the strips consist of [?]3 coincidence site lattices (CSLs) or in some cases single grains. Strip pattern was quite effective even in the case of short channel TFTs. N- and p-channel TFTs with typical field effect mobility (uFE) of 380 and 140 cm2/Vs, respectively, are successfully fabricated with significantly reduced characteristics variability. These high uFE and low variation of threshold voltage (Vth) by strip pattern showed significantly stable output characteristics regardless of the size of TFTs.