Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model
- Resource Type
- Article
- Authors
- Kret, Joanna; Parola, Stephanie; Martinez, Frederic; Vauthelin, Alexandre; Tournet, Julie; Rouillard, Yves; Tournie, Eric; Cuminal, Yvan
- Source
- IEEE Journal of Photovoltaics; 2021, Vol. 11 Issue: 4 p1032-1039, 8p
- Subject
- Language
- ISSN
- 21563381; 21563403
The heterogeneous integration of a GaSb subcell into a 4-terminal cell is currently experiencing a regain of interest for high concentrator multijunction photovoltaics. In this context, the assessment of the lateral charge carrier transport in a GaSb cell under concentrated light is fundamental. The characterization and modeling of a GaSb single-junction solar cell under concentration are presented here. The originality of this article resides in the fine analysis of experimental data using an in-house pseudo-3-D model where the intrinsic diode is modeled with a temperature-dependent 1-D physical model. The limiting factors responsible for the performance drop under concentrated light are discussed. It is also demonstrated that an efficiency of 12.5% can be reached under 64 suns with realistic technological improvements.