Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon
- Resource Type
- Article
- Authors
- He, Wei; Zakar, Ammar; Roger, Thomas; Yurkevich, Igor V.; Kaplan, Andre
- Source
- Optics Letters; August 2015, Vol. 40 Issue: 16 p3889-3892, 4p
- Subject
- Language
- ISSN
- 01469592; 15394794
The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5×10^11??s^−1 and 1.1×10^−10??cm^3?s^−1 for the impurity-assisted recombination and Auger ionization, respectively.