Deep level transient spectroscopy studies of undoped and Sn-doped AlxGa1−xAs epilayers grown by liquid-phase epitaxy
- Resource Type
- Article
- Source
- Journal of Materials Science Letters; January 1996, Vol. 15 Issue: 13 p1132-1133, 2p
- Subject
- Language
- ISSN
- 02618028; 15734811