Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2 -Based Ferroelectric Field Effect Transistor.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; Sep2021, Vol. 42 Issue 9, p1280-1283, 4p
- Subject
FIELD-effect transistors FERROELECTRICITY THRESHOLD voltage ELECTRIC transients ELECTRIC fields MOVEMENT sequences - Language
- ISSN
- 07413106