The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure.
- Resource Type
- Article
- Source
- Crystals (2073-4352); May2022, Vol. 12 Issue 5, pN.PAG-N.PAG, 11p
- Subject
MODULATION-doped field-effect transistors ETCHING techniques SCANNING transmission electron microscopy TWO-dimensional electron gas ENERGY dispersive X-ray spectroscopy SURFACE preparation ELECTRON gas ELECTRIC resistors - Language
- ISSN
- 20734352