Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach.
- Resource Type
- Article
- Source
- Electrochem; Sep2022, Vol. 3 Issue 3, p407-415, 9p
- Subject
DOPING agents (Chemistry) GALLIUM nitride SOLAR cells ELECTRIC power conversion SIMULATION methods & models - Language
- ISSN
- 26733293