Criteria for Plasmon-Enhanced Electron Drag in Si Metal–Oxide–Semiconductor Devices.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; Mar2015, Vol. 36 Issue 3, p265-267, 3p
- Subject
METAL oxide semiconductors SILICON ELECTRONS COULOMB'S law ELECTROSTATIC interaction - Language
- ISSN
- 07413106