Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.
- Resource Type
- Academic Journal
- Authors
- Ameen TA; Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.; Ilatikhameneh H; Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.; Tankasala A; Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.; Hsueh Y; Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.; Charles J; Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.; Fonseca J; Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.; Povolotskyi M; Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.; Kim JO; Korean Research Institute of Standards and Sciences, Daejeon 34113, South Korea.; Krishna S; Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA.; Allen MS; Air Force Research Laboratory, Munitions Directorate, Eglin AFB, FL 32542, USA.; Allen JW; Air Force Research Laboratory, Munitions Directorate, Eglin AFB, FL 32542, USA.; Rahman R; Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.; Klimeck G; Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.
- Source
- Publisher: Beilstein-Institut zur Förderung der Chemischen Wissenschaften Country of Publication: Germany NLM ID: 101551563 Publication Model: eCollection Cited Medium: Print ISSN: 2190-4286 (Print) Linking ISSN: 21904286 NLM ISO Abbreviation: Beilstein J Nanotechnol Subsets: PubMed not MEDLINE
- Subject
- Language
- English
- ISSN
- 2190-4286
A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these devices. We also show that for doped quantum dots, many-particle configuration interaction is also critical to accurately capture the optical transitions of the system. The sophisticated models presented in this work reproduce the experimental results for both undoped and doped quantum dot systems. The effects of alloy mole fraction of the strain controlling layer and quantum dot dimensions are discussed. Increasing the mole fraction of the strain controlling layer leads to a lower energy gap and a larger absorption wavelength. Surprisingly, the absorption wavelength is highly sensitive to the changes in the diameter, but almost insensitive to the changes in dot height. This behavior is explained by a detailed sensitivity analysis of different factors affecting the optical transition energy.