High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films.
- Resource Type
- Article
- Authors
- Y Yuan; Y Wang; K Gao; M Khalid; C Wu; W Zhang; F Munnik; E Weschke; C Baehtz; W Skorupa; M Helm; S Zhou
- Source
- Journal of Physics D: Applied Physics. 6/17/2015, Vol. 48 Issue 23, p1-1. 1p.
- Subject
- *INDIUM compounds
*CURIE temperature
*MAGNETIC anisotropy
*HOMOEPITAXY
*DILUTED magnetic semiconductors
*COMPRESSIVE strength
- Language
- ISSN
- 0022-3727
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1−xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x = 0.105. The substitution of Mn ions at the indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of the electrical control of magnetization and for spin-transfer-torque induced magnetization reversal. [ABSTRACT FROM AUTHOR]