Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory.
- Resource Type
- Article
- Authors
- Fei Zhou; Yao-Feng Chang; Fowler, Burt; Byun, Kwangsub; Lee, Jack C.
- Source
- Applied Physics Letters. 2/9/2015, Vol. 106 Issue 6, p1-5. 5p. 4 Graphs.
- Subject
- *SILICON oxide
*RANDOM access memory
*ELECTRIC resistance
*SWITCHING circuits
*ELECTROFORMING
- Language
- ISSN
- 0003-6951
Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps. Variation in set behaviors was observed and attributed to different defect distributions in the resistance switching region. Physical mechanism of electroforming process is discussed, which further explains the observed variation of defect distributions. A compliance current study confirms that the achievable memory states of SiOx RRAM are determined by its set behavior. This finding provides additional insight on achieving multi-bit memory storage with SiOx RRAM. [ABSTRACT FROM AUTHOR]