A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design.
- Resource Type
- Article
- Authors
- Xu, Yuehang; Fu, Wenli; Wang, Changsi; Ren, Chunjiang; Lu, Haiyan; Zheng, Weibin; Yu, Xuming; Yan, Bo; Xu, Ruimin
- Source
- Journal of Electromagnetic Waves & Applications. Oct2014, Vol. 28 Issue 15, p1888-1895. 8p.
- Subject
- *MODULATION-doped field-effect transistors
*GALLIUM nitride
*POWER amplifiers
*RADIO frequency
*ELECTRIC currents
DESIGN & construction
- Language
- ISSN
- 0920-5071
This paper presents a large-signal empirical model for GaN HEMT devices using an improved Angelov drain current formulation with self-heating effect and a modified non-linear capacitance model. The established model for small gate-width GaN HEMTs is validated by on-wafer load-pull measurements up to 14 GHz. Moreover, a scalable large-signal model is presented by adding scalable parameters to drain-source current and non-linear capacitance equations. The scalable model of a 1.25 mm GaN HEMT has been employed to design a class-AB power amplifier for validation purposes. The results show that good agreement has been achieved between the simulated and measured results with 37.2 dBm saturation output power (Psat) and 58% maximum power-added-efficiency at 3 GHz. [ABSTRACT FROM PUBLISHER]