Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications.
- Resource Type
- Article
- Authors
- Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; M., Uzer; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.
- Source
- AIP Conference Proceedings. 2016, Vol. 1733 Issue 1, p1-5. 5p. 2 Charts, 3 Graphs.
- Subject
- *NANOSTRUCTURED materials
*NANOFABRICATION
*ALUMINUM
*ZINC oxide thin films
*DOPING agents (Chemistry)
*METHANE
*ANNEALING of metals
- Language
- ISSN
- 0094-243X
CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively. [ABSTRACT FROM AUTHOR]