Fabrication of octamethyl substituted zinc(II) phthalocyanine nanostructure via exfoliation and use for solution-processed field-effect transistor.
- Resource Type
- Article
- Authors
- Wang, Yulong; Shan, Haiquan; Sun, Xize; Dong, Lei; Feng, Yaomiao; Hu, Qikun; Ye, Wenkang; Roy, V.A.L.; Xu, Jiaju; Xu, Zong-Xiang
- Source
- Organic Electronics. Apr2018, Vol. 55, p15-20. 6p.
- Subject
- *ZINC phthalocyanine
*FIELD-effect transistors
*NANOSTRUCTURES
*CHEMICAL peel
*NANOCRYSTALS
*MONOMOLECULAR films
- Language
- ISSN
- 1566-1199
Ultrathin nanocrystals with thicknesses of only several monolayers and even a single monolayer were prepared via exfoliation by ultrasound from an octamethyl substituted zinc(II) phthalocyanine (ZnMe 2 Pc). The drop-casted thin films of these nanocrystals exhibited higher crystallinity than that of the vacuum-deposited film. The drop-casted field-effect transistor based on these nanocrystals showed a significant increase in charge carrier mobility because of enhanced intermolecular π-π stacking in the ultrasonic-treated ZnMe 2 Pc, and the measured mobility was two orders of magnitude higher than that of the vacuum-deposited transistor. [ABSTRACT FROM AUTHOR]