Porous alumina masks are fabricated by anodization of aluminum films grown on both semiconducting and insulating substrates. For these self-assembled alumina masks, pore diameters and periodicities within the ranges of 10–130 and 20–200 nm, respectively, can be controlled by varying anodization conditions. 20 nm periodicities correspond to pore densities in excess of 1012 per square inch, close to the holy grail of media with 1 Tbit/in.2 density. With these alumina masks, ordered sub-100-nm planar ferromagnetic nanodot arrays covering over 1 cm2 were fabricated by electron beam evaporation and subsequent mask lift-off. Moreover, exchange-biased bilayer nanodots were fabricated using argon-ion milling. The average dot diameter and periodicity are tuned between 25 and 130 nm and between 45 and 200 nm, respectively. Quantitative analyses of scanning electron microscopy (SEM) images of pore and dot arrays show a high degree of hexagonal ordering and narrow size distributions. The dot periodicity obtained from grazing incidence small angle neutron scattering on nanodot arrays covering ∼2.5 cm2 is in good agreement with SEM image characterization. [ABSTRACT FROM AUTHOR]