Damage in ion implanted silicon measured by x-ray diffraction.
- Resource Type
- Article
- Authors
- Milita, S.; Servidori, M.
- Source
- Journal of Applied Physics. 6/1/1996, Vol. 79 Issue 11, p8278. 7p. 7 Graphs.
- Subject
- *ION implantation
*SILICON crystals
- Language
- ISSN
- 0021-8979
Presents information on an x-ray study of damage accumulation with dose in silicon implanted with boron and silicon ions at different energies. Semikinematical diffraction from a crystal with buried amorphous layer; Strain and disorder profiles in samples with buried amorphous layers; Conclusions.