Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering.
- Resource Type
- Article
- Authors
- Castro-Arata, R. A.; Stozharov, V. M.; Dolginsev, D. M.; Kononov, A. A.; Saito, Y.; Fons, P.; Tominaga, J.; Anisimova, N. I.; Kolobov, A. V.
- Source
- Semiconductors. Feb2020, Vol. 54 Issue 2, p201-204. 4p.
- Subject
- *MAGNETRON sputtering
*RADIOFREQUENCY sputtering
*MAGNETRONS
*DIELECTRICS
*DIELECTRIC properties
*PERMITTIVITY
*DIELECTRIC relaxation
- Language
- ISSN
- 1063-7826
The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study. [ABSTRACT FROM AUTHOR]