Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source.
- Resource Type
- Article
- Authors
- Daniltsev, V.; Demidov, E.; Drozdov, M.; Drozdov, Yu.; Kraev, S.; Surovegina, E.; Shashkin, V.; Yunin, P.
- Source
- Semiconductors. Nov2016, Vol. 50 Issue 11, p1439-1442. 4p.
- Subject
- *GALLIUM arsenide
*PROPYL compounds
*TELLURIDES
*VAPOR phase epitaxial growth
*ORGANOMETALLIC compounds
- Language
- ISSN
- 1063-7826
The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10 cm without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10 cm) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10 Ω cm) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10 cm are detected. [ABSTRACT FROM AUTHOR]