Iodine doping enabled wide range threshold voltage modulation in pentacene transistors.
- Resource Type
- Article
- Authors
- Wang, Yu Wu; Chang, Yu Chung; Hong, Ming Yue
- Source
- Thin Solid Films. Jan2019, Vol. 669, p29-33. 5p.
- Subject
- *IODINE
*DOPING agents (Chemistry)
*THRESHOLD voltage
*PENTACENE
*TRANSISTORS
- Language
- ISSN
- 0040-6090
Abstract We demonstrate an ultra-high range of threshold voltage modulation in pentacene transistors by iodine doping. Through diffusion control and thermal treatments, the transistor's threshold voltage can be tuned in a wide range of more than 100 V from enhance mode to deep depletion mode. The correlation between physical and electrical characteristics was investigated to elucidate the modulation mechanism. The results suggest an optimistic potential for pentacene transistors in high voltage device applications. The transistors in this research exhibit a high field effect mobility of ~0.18 cm2/Vs and on/off ratio ~105. Highlights • The threshold voltage of pentacene transistors is modulated by iodine doping. • A wide modulation range of about 140 V on the threshold voltage is demonstrated. • The amount of iodine is tunable and the process is reversible by post annealing. [ABSTRACT FROM AUTHOR]