Dominant recombination center in electron-irradiated 3C SiC.
- Resource Type
- Article
- Authors
- Son, N. T.; Sörman, E.; Chen, W. M.; Singh, M.; Hallin, C.; Kordina, O.; Monemar, B.; Janzén, E.; Lindström, J. L.
- Source
- Journal of Applied Physics. 4/1/1996, Vol. 79 Issue 7, p3784. 3p. 3 Graphs.
- Subject
- *SILICON carbide
*CRYSTAL defects
*PHOTOLUMINESCENCE
*MAGNETIC resonance
- Language
- ISSN
- 0021-8979
Presents a study which examined deep level defects and their role in carrier recombination processes in electron-irradiated 3C silicon carbide using photoluminescence and optically detected magnetic resonance. Principle behind the technique; Brief background on the sample material; Description of the experimental setup; Findings.