Comparative study of morphological, optical and conductive properties between low and heavily zinc doped nickel oxide thin films as hole transporting material.
- Resource Type
- Article
- Authors
- Sen, Tithi; Biswas, Amrita; Rout, Tapan Kumar; Thangavel, Rajalingam; Nair, Udayabhanu Gopalakrishnan
- Source
- Journal of Alloys & Compounds. Dec2021, Vol. 889, pN.PAG-N.PAG. 1p.
- Subject
- *NICKEL oxides
*NICKEL oxide
*OXIDE coating
*THIN films
*OPTICAL properties
*FIELD emission electron microscopy
*X-ray photoelectron spectroscopy
- Language
- ISSN
- 0925-8388
• Successful preparation of Zn:NiO films by safe and low-cost sol-gel spin coating method. • Compensation of singly and negatively charged Ni2+ ion vacancy by a positively charged hole. • Presence of hexagonal wurzite ZnO confirms formation of non-stoichiometric nickel oxide [Zn x Ni 1−x O]. • Higher concentration of holes leading to higher performance of p-type semi-conducting NiO as hole transporting material. • Abrupt and rare morphological, optical and electrical behaviors at certain heavy doping of transition metal Zn2+ Heavily Zinc ion (Zn2+)-doped nickel oxide (NiO) thin films had been prepared for the study of structural, optical and electrical properties in comparison with lower dopant concentration. Thin films were prepared through deposition on ITO coated glass substrate by using sol-gel spin coating technique. X-ray diffraction (XRD) patterns revealed the fact that Zn doped NiO (Zn:NiO) thin films are cubic in nature with two major diffraction peaks along (200) and (111) planes of cubic NiO phase. X-ray photoelectron Spectroscopy (XPS) data supported successful substitution of Zn2+ in NiO lattice. In, UV-Visible absorbance spectra the intensity maxima of the peaks was decreased with increase in doping concentration of Zn from 0% to 0.5–4.0%. The change in surface roughness of the Zn:NiO with varying dopant Zn2+ concentration was studied by Atomic Force Microscopy (AFM). Porus surface morphologies of the materials were evaluated in Field Emission Scanning Electron Microscopy (FESEM). The resistance change in both pure and Zn:NiO thin films was monitored by Electrochemical Impedance Spectroscopy (EIS) analysis. [ABSTRACT FROM AUTHOR]