The effect of dose rate on interstitial release from the end-of-range implant damage region in....
- Resource Type
- Article
- Authors
- Robertson, Lance S.; Lilak, Aaron
- Source
- Applied Physics Letters. 11/24/1997, Vol. 71 Issue 21, p3105. 3p. 3 Black and White Photographs, 4 Graphs.
- Subject
- *POINT defects
*LAYER structure (Solids)
- Language
- ISSN
- 0003-6951
Investigates the effect of dose rate on the interstitial flux from the end-of-range implant damage region of silicon (Si). Use of low temperature molecular beam epitaxy to grown boron doping superlattices (DSL) in Si; Details on DSL amorphization; Variation in Si ion implant dose rates.