Enhanced minority carrier lifetime in bulk hydrogen-passivated InAsSbBi.
- Resource Type
- Article
- Authors
- Estévez H, Félix A.; Bergthold, M.; Maksimov, Oleg; Bhandari, Harish B.; Morath, Christian P.; Duchane, Alexander W.; Webster, Preston T.; Wasserman, D.
- Source
- Applied Physics Letters. 1/8/2024, Vol. 124 Issue 2, p1-6. 6p.
- Subject
- *PHOTOLUMINESCENCE measurement
*SEMICONDUCTOR materials
*TIME-resolved measurements
*OPTICAL properties
*HYDROGENATION
*DILUTE alloys
- Language
- ISSN
- 0003-6951
We investigate the bulk passivation of the dilute bismide alloy InAsSbBi by plasma-assisted hydrogenation. InAsSbBi is of significant interest for mid- to long-wave infrared photodetection due to its bandgap flexibility and potential integration with heterostructured photodetector architectures. Epitaxially grown InAsSbBi samples are characterized by photoluminescence and time-resolved photoluminescence measurements for a range of hydrogenation conditions. Increases in the minority carrier lifetime of over 3 × are reported, with no degradation over a period of months following the treatment. Photoluminescence measurements confirm that the hydrogenation process improves the InAsSbBi optical properties. These results offer a path toward the improved performance of InAsSbBi-based photodetectors and potentially other narrow bandgap semiconductor materials and material systems. [ABSTRACT FROM AUTHOR]