Nickel thin films have been deposited on silicon (100) substrates by pulsed laser deposition at various substrate temperatures, Ts, in the range 100 - 700 °C. X-ray diffraction analysis confirms nickel phases are present for Ts in the range 100 - 300 °C, while above 500 °C Ni-Si phases were observed. The grain size and roughness of thin films were in the range 30 nm - 590 nm and 4.3 - 15.7 nm respectively for thickness of the films is in the range 45 nm - 100 nm. Systematic variation with Ts was found for these morphological parameters, as well as the ratio of the remnant to saturation magnetic moment, magnetic coercivity and magnetoresistance. [ABSTRACT FROM AUTHOR]