A Comparative Evaluation of New Silicon Carbide Diodes and State-of-the-Art Silicon Diodes for Power Electronic Applications.
- Resource Type
- Article
- Authors
- Elasser, Ahmed; Kheraluwala, Mustansir H.; Ghezzo, Mario; Steigerwald, Robert L.; Evers, Nicole Andrea; Kretchmer, James; Chow, T. Paul
- Source
- IEEE Transactions on Industry Applications. Jul/Aug2003, Vol. 39 Issue 4, p915. 7p. 2 Black and White Photographs, 4 Diagrams, 3 Charts, 5 Graphs.
- Subject
- *SILICON diodes
*SILICON
*SILICON carbide
*BIPOLAR transistors
*DIODES
- Language
- ISSN
- 0093-9994
Presents a study which compared silicon carbide (SiC) diodes and state-of-the-art silicon diodes for power electronic applications. Effect of diode reverse recovery on the turn-on losses of a fast insulated gate bipolar transistor; Advantage of using SiC devices; Effect of SiC diodes on converter characteristics.