Via-hole-based vertical GaN light emitting diodes.
- Resource Type
- Article
- Authors
- Jung, Hyun-Min; Nam, Gi-Yeon; Choi, Byung-Kyun; Lee, Tae-Hee; Kim, Hyun-Suk; Jeon, Soo-Kun; Park, Eun-Hyun; Kim, Chang-Tae
- Source
- Applied Physics Letters. 9/10/2007, Vol. 91 Issue 11, p111106. 3p. 1 Black and White Photograph, 1 Diagram, 1 Chart, 2 Graphs.
- Subject
- *LIGHT emitting diodes
*INDUSTRIAL lasers
*ELECTROLUMINESCENT devices
*GALLIUM nitride
*SAPPHIRES
- Language
- ISSN
- 0003-6951
A vertical GaN-light emitting diode (LED) has been fabricated on a sapphire substrate with periodic via holes formed by a laser drilling technique. n-contact metal which was deposited on the backside of sapphire substrate was directly connected with an Ohmic metal of n-GaN layer through the via holes. The via-hole-based vertical GaN-LED demonstrated an optical power improvement of up to 12.5% with lower forward operating voltage compared with a conventional GaN-LED. In addition, this vertical LED showed just 0.8% and 1.5% variations of optical power and operation voltage at the 500 h reliability test. [ABSTRACT FROM AUTHOR]