Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma.
- Resource Type
- Article
- Authors
- Carl, D. A.; Hess, D. W.; Lieberman, M. A.; Nguyen, T. D.; Gronsky, R.
- Source
- Journal of Applied Physics. 9/15/1991, Vol. 70 Issue 6, p3301. 13p. 1 Black and White Photograph, 2 Diagrams, 2 Charts, 15 Graphs.
- Subject
- *SILICA
*ELECTRON cyclotron resonance sources
*ELECTROLYTIC oxidation
*METAL oxide semiconductors
*DIRECT currents
- Language
- ISSN
- 0021-8979
Reports on the effects of direct current bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma. Explanation for the oxidation kinetics under anodic conditions; Relationship between oxide thickness, overall potential drop and ion current in the space-charge limited transport region; Role of silicon oxidation in metal-oxide-semiconductor device fabrication.