Detection of lead ions with enhancement-mode GaN-based heterojunction field-effect transistors.
- Resource Type
- Article
- Authors
- Wang, Fuxue; Dong, Xiaohu; Wang, Zhong; Cui, Hongfei
- Source
- Applied Physics A: Materials Science & Processing. Oct2023, Vol. 129 Issue 10, p1-7. 7p. 1 Diagram, 3 Graphs.
- Subject
- *FIELD-effect transistors
*LEAD
*HETEROJUNCTIONS
*THRESHOLD voltage
*IONS
*MODULATION-doped field-effect transistors
*METAL oxide semiconductor field-effect transistors
- Language
- ISSN
- 0947-8396
An enhancement-mode GaN-based heterojunction field-effect transistor functionalized by glutathione was used to detect lead (Pb2+) ions. The sensor exhibited a significant response to low Pb2+-ion concentrations. By utilizing the characteristic of the threshold voltage of the device changing with drain voltage ( V d ), the function of regulating the on or off state of the device by V d is achieved. This means that the device does not require additional gate bias to control the on or off state of the device, simplifying the circuit and facilitating integration. The results also show that the sensitivity of the sensor has a linear correlation with V d , which is beneficial for developing sensors with adjustable sensitivity. [ABSTRACT FROM AUTHOR]