Convertible Volatile and non-Volatile Resistive Switching in a Self-Rectifying Pt/TiOx/Ti Memristor
- Resource Type
- Conference
- Authors
- Wu, Zuheng; Zhang, Xumeng; Shi, Tuo; Wang, Yongzhou; Wang, Rui; Lu, Jian; Wei, Jinsong; Zhang, Peiwen; Liu, Qi
- Source
- 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Performance evaluation
Three-dimensional displays
Neuromorphic engineering
Memristors
Switches
Reservoirs
Hardware
Volatile switching mode
non-volatile switching mode and self-rectifying
- Language
In this work, a multi-functional self-rectifying memristor (Pt/TiO x /Ti) is fabricated. The device shows convertible volatile and non-volatile resistive switching. More importantly, the device has a high rectifying ratio in both switching modes (~10 5 for volatile and 10 6 for non-volatile), which is favorable for high-density 3D vertical integration. The convertible multi-switching behaviors and high self-rectifying ratio in a single memristor provide the flexibility for multi-functional applications in a large-scale array.