Single event upset sensitivity of medium-energy proton in Xilinx 16nm MPSoC
- Resource Type
- Conference
- Authors
- Li, Yonghong; Liu, Yongneng; Bai, Yurong; Lyu, Wei; He, Chaohui; Yang, Weitao; Li, Pei; Li, Ning; Li, Yang; Wang, Baichuan; Zhang, Xiaodong
- Source
- 2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED) Radiation Effects of Electronic Devices (ICREED), 2023 5th International Conference on. :1-4 May, 2023
- Subject
- Components, Circuits, Devices and Systems
Nuclear Engineering
Protons
Radiation effects
Sensitivity
Single event upsets
Random access memory
16nm MPSoC
medium-energy proton
single event upset
Configuration RAM
- Language
This work examines the single event upset of the Xilinx 16nmMPSoC irradiated with 20–40MeV protons. Results for SEU in configuration RAM(CRAM) is presented. The analysis indicates that with the increment of proton energy, the SEU cross section increases. The proton below 20MeV can not affect 16nm MPSoC.