Asymmetric etching profile control during high aspect ratio Plasma etch
- Resource Type
- Conference
- Authors
- Yang, Zusing; Wu, Li-Ian; Chang, Sheng-Yuan; Chiu, Yuan-Chieh; Lee, Hong-Ji; Lian, Nan-Tzu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan; Watanabe, Hayato; Cheng, Yinhwa; Arase, Takao; Mori, Masahito
- Source
- 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2018 29th Annual. :211-215 Apr, 2018
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Power, Energy and Industry Applications
Etching
Plasmas
Three-dimensional displays
Erbium
Shape control
Conductors
Polymers
asymmetric etch
high aspect ratio etch
3D NAND
- Language
- ISSN
- 2376-6697
Dependency of asymmetric etched profiles on open-ratio and pattern-size within the wafer was studied in a magnetic Very High Frequency (VHF) Plasma etching system for high aspect-ratio multiple alternating layers of silicon oxide/polysilicon (OP) etching. The etched physical features are sensitive to the overall open ratio on the wafer; the profile sidewalls became bent while the open ratio changed from 8% to 40%. In this study, the profile recovery from a method of design of experiments (DOE) and specific inductively magnetic field applied in the etching system was explored. The resulting etched profile is successfully back to normal on multi-layered OP film stack at 40% of open ratio. Even at next generation node development, the etching based on DOE also demonstrates good shape control on the etched profile which stacked with OP pairs over 3um in thickness in extremely high aspect ratio trench etching.