DAU Library

학위논문 동서

AlGaAs/GaAs HBT의 2차원 시뮬레이터

신영철

부산: 동아대학교 1997. -

45장: 삽도; 26cm. -

학위논문(석사)- 동아대학교 대학원 전자공학과 1997년2월

영문초록 : In this paper, two Dimensional Heterojunction Device Simulator(HEDS) has been made in order to analyze the various physical phenomena and the structural effects which are frequently occured in heterojunction semiconductor devices. In HEDS Poisson equation and Drift-Diffusion current equation as well as current continuity equation were discretized by the finite difference method, and the matrix was calculated by Powell Hybrid method. Especially, the effects of interface , surface and bulk recombination centers were considered, and the grid points were easily defined with the graphic function making the users identify the suitability of the grid distribution. And the grid points were selected to be uniform or parabolic distribution by the users. The material parameters of alloy semiconductors which could be made of the binary such as GaAs, AlAs and InAs were estimated and the other materials which the users want to use could be easily inserted into the program. In order to prove the performance of HEDS, it was applied to AlGaAs/GaAs HBT and the results of the single and double heterojunction HBTs were compared.

바로가기