In this article, we proposed and fabricated a prototype of single-channel SiC trench MOSFET with integrated trench junction barrier Schottky (TJBS) on the trench side for 1200-V application, named TJBS-MOS. The TJBS is protected by the grounded $\text{P}^{+}$ shielding layers under the gate and trench bottom. The measured specific ON-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$ ) is 5.95 $\text{m}\Omega \cdot $ cm2, with reverse conducting ON-state voltage ${V}_{R\_{} \mathrm{\scriptscriptstyle ON}}$ = 2.6 V at 300 A/cm2, which is reduced by 2.0 V compared with that of the CoolSiC MOSFET. Utilizing TCAD calibration according to the measured results, optimized results show that for the 1200-V-rated TJBS-MOS, ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$ of 2.52 $\text{m}\Omega \cdot $ cm2 with ${V}_{R\_{} \mathrm{\scriptscriptstyle ON}}$ = 2.04 V at 300 A/cm2 is obtained. Due to reduced channel density, ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$ is increased by 24.8% compared to a CoolSiC MOSFET with the same design rules. Fortunately, a high-frequency figure of merit (HFFOM1: ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}} \times {C}_{\text {GD}}$ and HFFOM2: ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}} \times {Q}_{\text {GD}}$ ) are improved by 57.2% and 72.9%, respectively, owing to smaller ${C}_{\text {GD}}$ and ${Q}_{\text {GD}}$ . Combined with reduced reverse recovery charge for the unipolar TJBS, the turn-on loss ( ${E}_{ \mathrm{\scriptscriptstyle ON}}$ ) and the turn-off loss ( ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ ) at 25 °C are reduced by 32.8% and 80.7%, respectively. Moreover, under high temperatures, ${E}_{ \mathrm{\scriptscriptstyle ON}}$ of the CoolSiC MOSFET increases significantly, while ${E}_{ \mathrm{\scriptscriptstyle ON}}$ of the TJBS-MOS remains unchanged.