Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT
- Resource Type
- Article
- Authors
- Hamid, Mohamad Hasnan Abdull; Mohd Asri, Rahil Izzati; Nuzaihan, Mohammad; Inaba, Masafumi; Hassan, Zainuriah; Kawarada, Hiroshi; Falina, Shaili; Syamsul, Mohd
- Source
- Key Engineering Materials; May 2023, Vol. 947 Issue: 1 p3-8, 6p
- Subject
- Language
- ISSN
- 10139826; 16629795
Metal organic chemical vapor deposition (MOCVD) was used to grow AlGaN/GaN HEMT on a sapphire substrate with a 3.0 nm GaN cap and a sample without a GaN cap. High resolution X-ray diffraction (HRXRD) was utilized to investigate the structural characteristics of the materials. The relationship between the electrical properties and two-dimensional electron gas (2DEG) I-V and Hall Effect measurement. The I-V measurement was used to investigate the resistance properties of AlGaN/GaN heterostructures. Hall Effect measurement was used to quantify electron mobility and sheet carrier concentration in both samples. The sample with a 3.0 nm GaN cap exhibited excellent electrical properties with 436.8 Ω/sq sheet resistivity and possessed a high value of sheet carrier concentration 3.46E+14 per cm2.