Adjusting the SnZndefects in Cu2ZnSn(S,Se)4absorber layer via Ge4+implanting for efficient kesterite solar cells
- Resource Type
- Article
- Authors
- Deng, Yueqing; Zhou, Zhengji; Zhang, Xin; Cao, Lei; Zhou, Wenhui; Kou, Dongxing; Qi, Yafang; Yuan, Shengjie; Zheng, Zhi; Wu, Sixin
- Source
- Journal of Energy Chemistry; October 2021, Vol. 61 Issue: 1 p1-7, 7p
- Subject
- Language
- ISSN
- 20954956
The power conversion efficiency of kesterite solar cells increases from 9.15% to 11.48% due to the suppression of Sn Zn deep defects by implantation of Ge into CZTSSe absorber layer.