Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer
- Resource Type
- Article
- Authors
- Yan, Qi-Rong; Zhang, Yong; Li, Shu-Ti; Yan, Qi-Ang; Shi, Pei-Pei; Niu, Qiao-Li; He, Miao; Li, Guo-Ping; Li, Jun-Rui
- Source
- Optics Letters; May 2012, Vol. 37 Issue: 9 p1556-1558, 3p
- Subject
- Language
- ISSN
- 01469592; 15394794
An InGaN/GaN blue light-emitting diode (LED) structure and an InGaN/GaN blue-violet LED structure were grown sequentially on the same sapphire substrate by metal—organic chemical vapor deposition. It was found that the insertion of an n-type AlGaN layer below the dual blue-emitting active layers showed better spectral stability at the different driving current relative to the traditional p-type AlGaN electron-blocking layer. In addition, color rendering index of a Y_3Al_5O_12:Ce^3+ phosphor-converted white LED based on a dual blue-emitting chip with n-type AlGaN reached 91 at 20 mA, and Commission Internationale de L’Eclairage coordinates almost remained at the same point from 5 to 60 mA.