Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer
- Resource Type
- Article
- Authors
- Wang, Xiaohua; Fan, Xiwu; Shan, Chongxin; Zhang, Jiying; Zhang, Zhenzhong; Lu, Youming; Liu, Yichun; Jia, Zhongyuan; Zhong, Jingchang; Shen, Dezhen
- Source
- Chinese Optics Letters; November 2003, Vol. 1 Issue: 11 p668-670, 3p
- Subject
- Language
- ISSN
- 16717694
In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0:56Cd0:44Se observed in Raman spectra suggests that the crystalquality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.