In this work, we examined the damage area and maximum surface temperature of silicon-based photodiodes (PIN) with varying external bias voltages under continuous laser irradiation at 1064 nm. The temperature at the silicon-based PIN detector's top surface center point is observed to steadily drop as the external bias voltage rises, and the extent of damage is also decreasing as the external bias voltage rises. Using COMSOL Multiphysics, a finite element simulation program, we ran a 2D numerical simulation of this process in order to better understand the mechanism underlying this phenomena. This is due to the fact that the produced thermons at 0 V bias voltage are mostly dependent on the detector surface, and when the bias voltage increases, the carrier's velocity of motion is accelerated and its heat accumulation is decreased, which lowers the detector temperature.