Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities
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In a high-reverse-voltage GTO thyristor, a negative beveling (6) with comparatively high beveling angle (.alpha.) is possible as edge contouring as a result of separating the p-type base layer into a central p-type base layer (4) of small depth and high edge concentration and a p-type base edge layer (5) of greater depth and lower edge concentration.
The production of the two p-type base layers (4, 5) is preferably carried out by simultaneous diffusion of two acceptors with different diffusion constants.