Dependence of the electrical properties of stabilized a-Se on the preparation conditions and the development of a double layer X-ray detector structure
- Resource Type
- Article
- Authors
- George Belev; Safa Kasap; J.A. Rowlands; David Hunter; Martin Yaffe
- Source
- Current Applied Physics, 8(3,4), pp.383-387 May, 2008
- Subject
- 물리학
- Language
- English
- ISSN
- 1567-1739
Stabilized a-Se lms deposited at suciently low substrate temperatures aren-like in which electrons can drift but holes are deeplytrapped. Such layers can be conveniently incorporated in a multilayer a-Se detector structure to block the injection of holes from thepositive electrode. We have shown that a simple double-layer detector structure based on a cold depositedn-layer (which is thenannealed) on which an i-like layer is grown can have dark current densities lower than 10. 10 Acm. 2 at a eld of 10 V/l m. The darkcurrent depends on the thickness of then-like layer. An a-Se X-ray detector for slot scanning was fabricated by having thein a-Se photo-conductor structure coated onto a CCD chip. The latter detector was shown to have excellent resolution with a modulation transfer func-tion remaining above 0.5 up to a spatial frequency of 11-14 lp mm-¹