A pHEMT Switch Based Dual-band Switchable LNA for 5G millimeter-wave applications
- Resource Type
- Conference
- Authors
- Wang, Zuojun; Hou, Debin; Hong, Wei
- Source
- 2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT) Millimetre-Waves and Terahertz Technologies (UCMMT), 2022 15th UK-Europe-China Workshop on. :1-4 Oct, 2022
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
5G mobile communication
PHEMTs
Gallium arsenide
Dual band
Switches
Bandwidth
Terahertz materials
Gallium arsenide (GaAs)
dual-band
low-noise amplifier (LNA)
monolithic microwave integrated circuit (MMIC)
switchable
- Language
- ISSN
- 2639-4537
This paper presents the design, analyze and implementation of a dual-band switchable low-noise amplifier (LNA). The LNA adopts a four-stage common source topology. The inter-stage matching circuit between the third and fourth stages employs a pHEMT switch to change the operation frequency without consuming extra dc power or increasing chip area. The proposed LNA is fabricated in a 0.1$-\mu$m GaAs process. The lower operation band covers a 3-dB bandwidth from 25 to 29 GHz with a maximum gain of 26.7 dB, which is designed for 5G FR2 frequency band n257 and n258. The higher operation band covers a 3-dB bandwidth from 35 to 41 GHz with a maximum gain of 24.6 dB, which is designed for 5GFR2 frequency band n260. The noise Figure (NF) in both bands is lower than 3.2 dB. The LNA consumes an S2-mW power and occupies a chip area of 1.6 mm 2 . The proposed switchable LNA is suitable for the 5G communication applications.