Failure analysis of ESD-induced MOSFET gate oxide damages via step-by-step approach
- Resource Type
- Conference
- Authors
- Luo, Xia; Xu, Jiexuan; Xu, Xiaowei; Luo, Hongwei; Dai, Zongbei
- Source
- 2022 International EOS/ESD Symposium on Design and System (IEDS) Design and System (IEDS), 2022 International EOS/ESD Symposium on. :1-4 Nov, 2022
- Subject
- Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Transportation
MOSFET
Systematics
Failure analysis
Logic gates
Product development
- Language
To discover the ESD-induced MOSFET gate oxide damages after the system-level tests during the product development phase, systematic failure analysis had been conducted via step-by-step approach, indicating that the adopted approach is capable for the identification of gate oxide damages.