Trajectory-Model-Based Switching Waveform Restoration Method for Accurate Dynamic Characterization of SiC Power MOSFET
- Resource Type
- Conference
- Authors
- Zhang, Man; Zhao, Shuang; Wang, Jianing; Ding, Lijian; Li, Helong; Yin, Chenxu; Wang, Xiyin
- Source
- 2022 IEEE International Power Electronics and Application Conference and Exposition (PEAC) Power Electronics and Application Conference and Exposition (PEAC), 2022 IEEE International. :922-927 Nov, 2022
- Subject
- Power, Energy and Industry Applications
Semiconductor device modeling
Performance evaluation
MOSFET
Silicon carbide
Switches
Voltage
Mathematical models
SiC MOSFET
trajectory model
switching process
dynamic analysis
- Language
Characterization of the power semiconductor device switching process is critical to application since the switching speed determines the performance of the power converter. Accurate characterization of silicon carbide (SiC) devices is more difficult than the silicon counterparts due to the higher switching slew rate. It can lead to ringing in the power loop and finally the errors in characterization. Aiming at addressing this problem, in this paper, an accurate mathematic model of switching trajectory is derived to extract the accurate voltage and energy loss during SiC MOSFET switching process. A model-based true waveform restoration method is proposed to mitigate the impact of parasitic parameters on dynamic characterization. Without changing the hardware, it can increase the accuracy of the dynamic analysis of the SiC devices.