Scaling of EPC’s 100 V Enhancement-Mode Power Transistors
- Resource Type
- Conference
- Authors
- Stecklein, Gordon; Green, Jordan; Wong, Christopher; Cao, Joe; Beach, Bob
- Source
- 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :64-67 Nov, 2022
- Subject
- Components, Circuits, Devices and Systems
Engineering Profession
General Topics for Engineers
Current measurement
Capacitance-voltage characteristics
Field effect transistors
Logic gates
Power transistors
Data models
Integrated circuit modeling
HEMT
E-mode
GaN
Scaling
Variation
Device Modeling
- Language
- ISSN
- 2687-8577
The same core device model is shown to accurately reproduce the current-voltage and capacitance-voltage characteristics of enhancement-mode GaN 100 V power transistors of various sizes. Using linear scaling, excellent agreement with measurements is achieved over an order of magnitude variation in total gate width. Fractional variation in on-resistance is shown to decrease with increasing transistor size, with implications for integrated circuit-sized transistors where gate width decreases by up to 5 orders of magnitude.