In this paper, we present atomistic models of novel vertical heterostructures formed by 2D monolayers of buckled borophene with triangular crystal lattice, gallium nitride (GaN), and zinc oxide (ZnO). An in silico study of the features of atomic structure and electrical properties for these models is carried out. It is found that the constructed atomistic models of borophene/GaN and borophene/ZnO vertical heterostructures are characterized by energetically stability and have a gapless band structure. The presence of the current anisotropy in the van der Waals heterostructures of this type is revealed. It is shown that during the formation of layered heterostructures, the charge is transferred from borophene sheet to GaN and ZnO monolayers. Based on the calculation results, it is predicted that borophene/GaN and borophene/ZnO van der Waals heterostructures have good prospects for use as functional materials for development of nanoelectronic devices, in particular, as Schottky contacts.