Comparison Study on EMI Performance of SiC and Si diodes in Cockcroft-Walton Voltage Multiplier
- Resource Type
- Conference
- Authors
- Dong, Minghai; Li, Hui; See, Kye Yak; Yin, Shan; Zhao, Zhenyu; Fan, Fei; Wu, Yingzhe
- Source
- 2022 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC) Electromagnetic Compatibility (APEMC), 2022 Asia-Pacific International Symposium on. :694-697 Sep, 2022
- Subject
- Fields, Waves and Electromagnetics
Schottky diodes
Silicon carbide
Frequency-domain analysis
Electromagnetic interference
Schottky barriers
Electromagnetic compatibility
Silicon
Silicon Carbide
voltage multiplier
electromagnetic interference
- Language
- ISSN
- 2640-7469
This work studies the electromagnetic interference (EMI) performance of Silicon Carbide (SiC) Schottky barrier diode in the Cockcroft-Walton voltage multiplier (CWVM). It’s compared with Silicon (Si) fast recovery diode based on the time-domain waveforms and frequency-domain spectra. The experimental result shows that the EMI in SiC-based CWVM is more severe than the Si-based from frequency over 300 kHz. However, with stage numbers of CWVM increased to 6, EMI levels of both circuits are similar.